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MoS2 thin films prepared by sulfurization
Author(s): M. Sojková; Š. Chromik; A. Rosová; E. Dobročka; P. Hutár; D. Machajdík; A. P. Kobzev; M. Hulman
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Paper Abstract

Sulfurization of a Mo layer is one of the most used methods for preparation of thin MoS2 films. In the method, a sulfur powder and Mo covered substrate are placed in different positions within a furnace, and heated separately. This requires a furnace having at least two zones. Here, we present a simplified version of the method where a one-zone tube furnace was used. A molybdenum film on a substrate and a sulfur powder were placed in the center of the furnace and heated at temperatures above 800°C. Mo films transform into MoS2 in vapors of sulphur at high temperatures. As-prepared films were characterized by number of techniques including X-ray diffraction (XRD), atomic force microscopy (AFM), transmission electron microscopy (TEM), Raman, Rutherford backscattering (RBS) and X-ray photoelectron spectroscopy (XPS). It appears that one-zone sulfurization, with just one annealing temperature used, is a suitable method for fabrication of MoS2 thin films. This method is fast, cheap and easy to scale up.

Paper Details

Date Published: 31 August 2017
PDF: 7 pages
Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103541K (31 August 2017); doi: 10.1117/12.2273846
Show Author Affiliations
M. Sojková, Institute of Electrical Engineering (Slovakia)
Š. Chromik, Institute of Electrical Engineering (Slovakia)
A. Rosová, Institute of Electrical Engineering (Slovakia)
E. Dobročka, Institute of Electrical Engineering (Slovakia)
P. Hutár, Institute of Electrical Engineering (Slovakia)
D. Machajdík, Institute of Electrical Engineering (Slovakia)
Joint Institute for Nuclear Research (Russian Federation)
A. P. Kobzev, Joint Institute for Nuclear Research (Russian Federation)
M. Hulman, Institute of Electrical Engineering (Slovakia)


Published in SPIE Proceedings Vol. 10354:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIV
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

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