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Proceedings Paper

Very efficient electrical spin injection (/detection) into quantum dots at zero magnetic field
Author(s): F. Cadiz; D. Lagarde; S. H. Liang; B. Tao; J. Frougier; Y. Lu; B. Xu; H. Jaffrès; Z. Wang; X. Han; M. Hehn; S. Mangin; J. M. George; H. Carrere; T. Amand; X. Marie; B. Urbaszek; P. Renucci
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Paper Abstract

In this paper, we demonstrate a very efficient electrical spin injection into an ensemble of InAs/InGaAs quantum dots at zero magnetic field. The circular polarization of the electroluminescence coming from the dots, which are embedded into a GaAs-based Spin Light Emitting diode reaches a value as large as 20% at low temperature. In this device, no external magnetic field is required in order to inject or read spin polarization thanks to the use of an ultrathin CoFeB electrode (1.1 nm), as well as p-doped quantum dots (with one hole per dot in average) as an optical probe. The electroluminescence circular polarization of the dots follows the hysteresis loop of the magnetic layer and decreases as a function of bias for large voltages. In a reverse way, we have also investigated the possibility to use such a device as a photodetector presenting a photon helicity-dependent photocurrent. We observe a weak asymmetry of photocurrent under right and left polarized light that follows the hysteresis cycle of the magnetic layer, and the effect decreases for increasing temperatures and can be controlled by the bias.

Paper Details

Date Published: 6 September 2017
PDF: 6 pages
Proc. SPIE 10357, Spintronics X, 103571D (6 September 2017); doi: 10.1117/12.2273746
Show Author Affiliations
F. Cadiz, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)
D. Lagarde, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)
S. H. Liang, Institut Jean Lamour, CNRS, Nancy Univ. (France)
B. Tao, Institut Jean Lamour, CNRS, Nancy Univ. (France)
J. Frougier, CNRS Thales, Univ. Paris-Sud 11 (France)
Y. Lu, Institut Jean Lamour, CNRS, Nancy Univ. (France)
B. Xu, Institute of Semiconductors (China)
H. Jaffrès, CNRS Thales, Univ. Paris-Sud 11 (France)
Z. Wang, Institute of Semiconductors (China)
X. Han, Institute of Physics (China)
M. Hehn, Institut Jean Lamour, CNRS, Nancy Univ. (France)
S. Mangin, Institut Jean Lamour, CNRS, Nancy Univ. (France)
J. M. George, CNRS Thales, Univ. Paris-Sud 11 (France)
H. Carrere, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)
T. Amand, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)
X. Marie, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)
B. Urbaszek, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)
P. Renucci, Univ. de Toulouse, INSA, CNRS, UPS, LPCNO (France)


Published in SPIE Proceedings Vol. 10357:
Spintronics X
Henri-Jean Drouhin; Jean-Eric Wegrowe; Manijeh Razeghi; Henri Jaffrès, Editor(s)

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