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Proceedings Paper

Probing the origins of temperature dependence of charge transport in organic single crystal transistors (Conference Presentation)
Author(s): Emily G. Bittle; Adam J. Biacchi; Lisa Fredin; Andrew Herzing; Thomas Allison; Angela Hight Walker; David J. Gundlach

Paper Abstract

Low temperature transport measurements of classical semiconductors are a well-defined method to determine the physics of transport behavior. These measurements are also used to evaluate organic semiconductors, though physical interpretation is not yet fully developed. The similar energy ranges of the various processes involved in charge transport in organic semiconductors, including excitonic coupling, charge-phonon coupling, and trap distributions, result in ambiguity in the interpretation of temperature dependent electrical measurements. The wide variety of organic semiconductors, ranging from well-ordered small molecule crystals to disordered polymers, manifest varying degrees of “ideal” device behavior and require intensive studies in order to capture the full range of physical mechanisms involved in electronic transport in this class of materials. In addition, the physics at electrical contacts and dielectric material interfaces strongly affect device characteristics and results in temperature dependent behavior that is unrelated to the semiconductor itself. In light of these complications, our group is working toward understanding the origins of temperature dependent transport in single crystal, small molecule organic semiconductors with ordered packing. In order to disentangle competing physical effects on device characterization at low temperature, we use TEM and Raman spectroscopy to track changes in the structure and thermal molecular motion, correlated with density functional theory calculations. We perform electrical characterization, including DC current-voltage, AC impedance, and displacement current measurements, on transistors built with a variety of contact and dielectric materials in order to fully understand the origin of the transport behavior. Results of tetracene on silicon dioxide and Cytop dielectrics will be discussed.

Paper Details

Date Published: 19 September 2017
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Proc. SPIE 10365, Organic Field-Effect Transistors XVI, 103650T (19 September 2017); doi: 10.1117/12.2273700
Show Author Affiliations
Emily G. Bittle, National Institute of Standards and Technology (United States)
Adam J. Biacchi, National Institute of Standards and Technology (United States)
Lisa Fredin, National Institute of Standards and Technology (United States)
Andrew Herzing, National Institute of Standards and Technology (United States)
Thomas Allison, National Institute of Standards and Technology (United States)
Angela Hight Walker, National Institute of Standards and Technology (United States)
David J. Gundlach, National Institute of Standards and Technology (United States)


Published in SPIE Proceedings Vol. 10365:
Organic Field-Effect Transistors XVI
Iain McCulloch; Oana D. Jurchescu, Editor(s)

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