Share Email Print
cover

Proceedings Paper • new

N-state random switching based on quantum tunnelling
Author(s): Ramón Bernardo Gavito; Fernando Jiménez Urbanos; Jonathan Roberts; James Sexton; Benjamin Astbury; Hamzah Shokeir; Thomas McGrath; Yasir J. Noori; Christopher S. Woodhead; Mohamed Missous; Utz Roedig; Robert J. Young
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

In this work, we show how the hysteretic behaviour of resonant tunnelling diodes (RTDs) can be exploited for new functionalities. In particular, the RTDs exhibit a stochastic 2-state switching mechanism that could be useful for random number generation and cryptographic applications. This behaviour can be scaled to N-bit switching, by connecting various RTDs in series. The InGaAs/AlAs RTDs used in our experiments display very sharp negative differential resistance (NDR) peaks at room temperature which show hysteresis cycles that, rather than having a fixed switching threshold, show a probability distribution about a central value. We propose to use this intrinsic uncertainty emerging from the quantum nature of the RTDs as a source of randomness. We show that a combination of two RTDs in series results in devices with three-state outputs and discuss the possibility of scaling to N-state devices by subsequent series connections of RTDs, which we demonstrate for the up to the 4-state case.

In this work, we suggest using that the intrinsic uncertainty in the conduction paths of resonant tunnelling diodes can behave as a source of randomness that can be integrated into current electronics to produce on-chip true random number generators. The N-shaped I-V characteristic of RTDs results in a two-level random voltage output when driven with current pulse trains. Electrical characterisation and randomness testing of the devices was conducted in order to determine the validity of the true randomness assumption. Based on the results obtained for the single RTD case, we suggest the possibility of using multi-well devices to generate N-state random switching devices for their use in random number generation or multi-valued logic devices.

Paper Details

Date Published: 31 August 2017
PDF: 9 pages
Proc. SPIE 10354, Nanoengineering: Fabrication, Properties, Optics, and Devices XIV, 103541T (31 August 2017); doi: 10.1117/12.2273298
Show Author Affiliations
Ramón Bernardo Gavito, Lancaster Univ. (United Kingdom)
Fernando Jiménez Urbanos, IMDEA Nanociencia (Spain)
Jonathan Roberts, Lancaster Univ. (United Kingdom)
James Sexton, The Univ. of Manchester (United Kingdom)
Benjamin Astbury, Lancaster Univ. (United Kingdom)
Hamzah Shokeir, Lancaster Univ. (United Kingdom)
Thomas McGrath, Lancaster Univ. (United Kingdom)
Yasir J. Noori, Lancaster Univ. (United Kingdom)
Christopher S. Woodhead, Lancaster Univ. (United Kingdom)
Mohamed Missous, The Univ. of Manchester (United Kingdom)
Utz Roedig, Lancaster Univ. (United Kingdom)
Robert J. Young, Lancaster Univ. (United Kingdom)


Published in SPIE Proceedings Vol. 10354:
Nanoengineering: Fabrication, Properties, Optics, and Devices XIV
Eva M. Campo; Elizabeth A. Dobisz; Louay A. Eldada, Editor(s)

© SPIE. Terms of Use
Back to Top