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Characterizing the surface fluctuation of an epitaxial wafer by using a Shack-Hartmann wave-front sensor
Author(s): Pao-Keng Yang; Yao-Kai Zhuang
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Paper Abstract

By using a light-emitting diode as the probing light source and a Shack-Hartmann wave-front sensor to execute a relative measurement, we present a simple and sensitive method for measuring surface fluctuation of a nominally flat sample. We used an epitaxial wafer for test. The reflected wave front from the surface of the sample was first calibrated to be a planar surface. The surface fluctuation of the test sample could be estimated from the increment on the variance of the wave-front surface to its regression plane after the sample had been shifted by a small distance by using the Bienaymé formula.

Paper Details

Date Published: 23 August 2017
PDF: 7 pages
Proc. SPIE 10373, Applied Optical Metrology II, 103730W (23 August 2017); doi: 10.1117/12.2273276
Show Author Affiliations
Pao-Keng Yang, Minghsin Univ. of Science and Technology (Taiwan)
Yao-Kai Zhuang, Minghsin Univ. of Science and Technology (Taiwan)


Published in SPIE Proceedings Vol. 10373:
Applied Optical Metrology II
Erik Novak; James D. Trolinger, Editor(s)

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