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Proceedings Paper

Ultrafast carrier capture and Auger recombination in individual III-nitride nanowires (Conference Presentation)
Author(s): Stephane A. Boubanga Tombet; Jeremy B. Wright; Ping Lu; Michael R. C. Williams; Changyi Li; George T. Wang; Rohit P. Prasankumar
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Paper Abstract

Ultrafast optical microscopy is an important tool
 for examining fundamental phenomena in semiconductor
 nanowires with high temporal and spatial resolution. Here, we used this technique to study carrier dynamics in single
GaN/InGaN core−shell nonpolar multiple quantum well
 nanowires. We find that intraband carrier−carrier scattering is
 the main channel governing carrier capture, while subsequent
 carrier relaxation is dominated by three-carrier Auger
 recombination at higher densities and bimolecular recombina
tion at lower densities. The Auger constants in these nanowires are approximately 2 orders of magnitude lower than in planar InGaN multiple quantum wells, highlighting their potential for future light-emitting devices.

Paper Details

Date Published: 25 September 2017
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Proc. SPIE 10345, Active Photonic Platforms IX, 1034505 (25 September 2017); doi: 10.1117/12.2273227
Show Author Affiliations
Stephane A. Boubanga Tombet, Los Alamos National Lab. (United States)
Jeremy B. Wright, Sandia National Labs. (United States)
Ping Lu, Sandia National Labs. (United States)
Michael R. C. Williams, Los Alamos National Lab. (United States)
Changyi Li, Sandia National Labs. (United States)
George T. Wang, Sandia National Labs. (United States)
Rohit P. Prasankumar, Los Alamos National Lab. (United States)


Published in SPIE Proceedings Vol. 10345:
Active Photonic Platforms IX
Ganapathi S. Subramania; Stavroula Foteinopoulou, Editor(s)

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