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Organolead halide perovskites for low voltage resistive switching memories (Conference Presentation)
Author(s): Ho Won Jang
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Paper Abstract

We report multilevel resistive switching using an organolead halide perovskite (OHP). Solution-processed 400 nm thick CH3NH3PbI3 films with Ag top and Pt bottom electrodes exhibited electroforming-free resistive switching with a low SET voltage of ~0.13 V and high ON/OFF ratios of ≈10^6 under ±0.15 V pulses. Based on these extraordinary properties, four-level storage capability of the CH3NH3PbI3-based devices was demonstrated. We attributed the high performance resistive switching behavior of the CH3NH3PbI3-based devices to the energetically benign migration of anions defects, but further studies are needed to identify the mechanism responsible for the ultralow electric field resistive switching. Enhancements in switching speed, endurance, and retention are also necessary and may be achieved by controlling the doping concentration, crystallinity, and large area compositional uniformity of the OHP film. The inherent structural flexibility and the number of possible combinations for ABX3-type OHPs will support intensive studies for other electronic device applications beyond resistive switching memories. Finally, we believe that the solution-processed CH3NH3PbI3-based cells are promising for microelectronics built on flexible substrates.

Paper Details

Date Published: 19 September 2017
PDF
Proc. SPIE 10366, Hybrid Memory Devices and Printed Circuits 2017, 1036609 (19 September 2017); doi: 10.1117/12.2272831
Show Author Affiliations
Ho Won Jang, Seoul National Univ. (Korea, Republic of)


Published in SPIE Proceedings Vol. 10366:
Hybrid Memory Devices and Printed Circuits 2017
Emil J. W. List-Kratochvil, Editor(s)

Video Presentation

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