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Organic neuromorphic devices based on electrochemical concepts (Conference Presentation)
Author(s): Paschalis Gkoupidenis; Dimitrios Koutsouras; Thomas Lonjaret; Shahab Rezaei-Mazinani; Esma Ismailova; Jessamyn A. Fairfield; George G. Malliaras

Paper Abstract

Neuroinspired device architectures offer the potential of higher order functionalities in information processing beyond their traditional microelectronic counterparts. In the actual neural environment, neural processing takes place in a complex and interwoven network of neurons and synapses. In addition, this network is immersed in a common electrochemical environment and global parameters such as ionic concentrations and concentrations of various hormones regulate the overall behaviour of the network. Here, various concepts of organic neuromorphic devices are presented based on organic electrochemical transistors (OECTs). Regarding the implementation of neuromorphic devices, the key properties of the OECT that resemble the neural environment are also presented. These include the operation in liquid electrolyte environment, low power consumption and the ability of formation of massive interconnections through the electrolyte continuum. Showcase examples of neuromorphic functions with OECTs are demonstrated, including short-, long-term plasticity and spatiotemporal or distributed information processing.

Paper Details

Date Published: 19 September 2017
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Proc. SPIE 10366, Hybrid Memory Devices and Printed Circuits 2017, 1036602 (19 September 2017); doi: 10.1117/12.2272693
Show Author Affiliations
Paschalis Gkoupidenis, Ecole Nationale Supérieure des Mines de Saint-Étienne (France)
Max-Planck-Institut für Polymerforschung (Germany)
Dimitrios Koutsouras, Ecole Nationale Supérieure des Mines de Saint-Étienne (France)
Thomas Lonjaret, Ecole Nationale Supérieure des Mines de Saint-Étienne (France)
Shahab Rezaei-Mazinani, Ecole Nationale Supérieure des Mines de Saint-Étienne (France)
Esma Ismailova, Ecole Nationale Supérieure des Mines de Saint-Étienne (France)
Jessamyn A. Fairfield, National Univ. of Ireland, Galway (Ireland)
George G. Malliaras, Ecole Nationale Supérieure des Mines de Saint-Étienne (France)


Published in SPIE Proceedings Vol. 10366:
Hybrid Memory Devices and Printed Circuits 2017
Emil J. W. List-Kratochvil, Editor(s)

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