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Proceedings Paper

Multi-band filter design with less total film thickness for short-wave infrared
Author(s): Yung-Jhe Yan; I-Pen Chien; Po-Han Chen; Sheng-Hui Chen; Yi-Chun Tsai; Mang Ou-Yang
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Paper Abstract

A multi-band pass filter array was proposed and designed for short wave infrared applications. The central wavelength of the multi-band pass filters are located about 905 nm, 950 nm, 1055 nm and 1550 nm. In the simulation of an optical interference band pass filter, high spectrum performance (high transmittance ratio between the pass band and stop band) relies on (1) the index gap between the selected high/low-index film materials, with a larger gap correlated to higher performance, and (2) sufficient repeated periods of high/low-index thin-film layers. When determining high and low refractive index materials, spectrum performance was improved by increasing repeated periods. Consequently, the total film thickness increases rapidly. In some cases, a thick total film thickness is difficult to process in practice, especially when incorporating photolithography liftoff. Actually the maximal thickness of the photoresist being able to liftoff will bound the total film thickness of the band pass filter. For the application of the short wave infrared with the wavelength range from 900nm to 1700nm, silicone was chosen as a high refractive index material. Different from other dielectric materials used in the visible range, silicone has a higher absorptance in the visible range opposite to higher transmission in the short wave infrared. In other words, designing band pass filters based on silicone as a high refractive index material film could not obtain a better spectrum performance than conventional high index materials like TiO2 or Ta2O5, but also its material cost would reduce about half compared to the total film thickness with the conventional material TiO2. Through the simulation and several experimental trials, the total film thickness below 4 um was practicable and reasonable. The fabrication of the filters was employed a dual electric gun deposition system with ion assisted deposition after the lithography process. Repeating four times of lithography and deposition process and black matrix coating, the optical device processes were completed.

Paper Details

Date Published: 23 August 2017
PDF: 7 pages
Proc. SPIE 10375, Current Developments in Lens Design and Optical Engineering XVIII, 1037506 (23 August 2017); doi: 10.1117/12.2272560
Show Author Affiliations
Yung-Jhe Yan, National Chiao Tung Univ. (Taiwan)
I-Pen Chien, National Chiao Tung Univ. (Taiwan)
Po-Han Chen, National Central Univ. (Taiwan)
Sheng-Hui Chen, National Central Univ. (Taiwan)
Yi-Chun Tsai, National Chiao Tung Univ. (Taiwan)
Mang Ou-Yang, National Chiao Tung Univ. (Taiwan)


Published in SPIE Proceedings Vol. 10375:
Current Developments in Lens Design and Optical Engineering XVIII
R. Barry Johnson; Virendra N. Mahajan; Simon Thibault, Editor(s)

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