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Proceedings Paper

Facile fabrication of Si-based nanostructures
Author(s): Lingkuan Meng; Jiang Yan
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Paper Abstract

In this work, we present an attractive and novel fabrication technique that can produce highly-controlled silicon-based nanostructures in wafer-scale by a seldom used material in IC fabrication, amorphous silicon (α-Si), as an etch mask. The α-Si mask pattern is precisely transferred into the underlying SiO2 substrate material with a high fidelity by a novel top-down fabrication. It is the first time for α-Si film used as an etch mask to fabricate various Si-based nanostructures. It is observed that the α-Si mask can significantly reduce the pattern edge roughness and achieve highly uniform and smooth sidewalls. SiO2 nanostructures directly fabricated can be served as nanotemplates to transfer into the underlying substrates such as silicon, germanium, transistor gate or other dielectric materials to form electrically functional nanostructures and devices. Several typical Si-based nanostructures, such as nanoline, nanofin and transistor gate patterning, have been fabricated successfully using the simple α-Si material combining with electron beam lithography. Our results demonstrate that the Si-based nanostructures as small as sub-20 nm may be achievable. More significantly, the novel approach is a potentially universal method that is fully compatible with the current existing Si-based CMOS technologies.

Paper Details

Date Published: 21 March 2017
PDF: 6 pages
Proc. SPIE 10149, Advanced Etch Technology for Nanopatterning VI, 1014910 (21 March 2017); doi: 10.1117/12.2271503
Show Author Affiliations
Lingkuan Meng, Institute of Microelectronics (China)
Univ. of Chinese Academy of Sciences (China)
Jiang Yan, Univ. of Chinese Academy of Sciences (China)


Published in SPIE Proceedings Vol. 10149:
Advanced Etch Technology for Nanopatterning VI
Sebastian U. Engelmann, Editor(s)

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