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Modelling of optoelectronic circuits based on resonant tunneling diodes
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Paper Abstract

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Paper Details

Date Published: 22 August 2017
PDF: 10 pages
Proc. SPIE 10453, Third International Conference on Applications of Optics and Photonics, 1045308 (22 August 2017); doi: 10.1117/12.2271318
Show Author Affiliations
João F. M. Rei, Univ. do Algarve (Portugal)
James A. Foot, Univ. do Algarve (Portugal)
Gil C. Rodrigues, Univ. do Algarve (Portugal)
José M. L. Figueiredo, Univ. do Algarve (Portugal)


Published in SPIE Proceedings Vol. 10453:
Third International Conference on Applications of Optics and Photonics
Manuel Filipe P. C. M. Martins Costa, Editor(s)

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