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Proceedings Paper

Connected component analysis of review-SEM images for sub-10nm node process verification
Author(s): Sandip Halder; Philippe Leray; Kaushik Sah; Andrew Cross; Paolo Parisi
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Paper Abstract

Analysis of hotspots is becoming more and more critical as we scale from node to node. To define true process windows at sub-14 nm technology nodes, often defect inspections are being included to weed out design weak spots (often referred to as hotspots). Defect inspection sub 28 nm nodes is a two pass process. Defect locations identified by optical inspection tools need to be reviewed by review-SEM’s to understand exactly which feature is failing in the region flagged by the optical tool. The images grabbed by the review-SEM tool are used for classification but rarely for quantification. The goal of this paper is to see if the thousands of review-SEM images which are existing can be used for quantification and further analysis. More specifically we address the SEM quantification problem with connected component analysis.

Paper Details

Date Published: 28 March 2017
PDF: 7 pages
Proc. SPIE 10145, Metrology, Inspection, and Process Control for Microlithography XXXI, 101451Y (28 March 2017); doi: 10.1117/12.2270492
Show Author Affiliations
Sandip Halder, IMEC (Belgium)
Philippe Leray, IMEC (Belgium)
Kaushik Sah, KLA-Tencor Corp. (United States)
Andrew Cross, KLA-Tencor Corp. (United States)
Paolo Parisi, KLA-Tencor Corp. (United States)


Published in SPIE Proceedings Vol. 10145:
Metrology, Inspection, and Process Control for Microlithography XXXI
Martha I. Sanchez, Editor(s)

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