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AlGaInN laser diode bars for high-power, optical integration and quantum technologies
Author(s): S. P. Najda; P. Perlin; T. Suski; L. Marona; S. Stanczyk; P. Wisniewski; R. Czernecki; D. Schiavon; M. Leszczyński
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Paper Abstract

GaN laser diodes fabricated from the AlGaInN material system is an emerging technology for high power, optical integration and quantum applications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well, giving rise to new and novel applications including displays and imaging systems, free-space and underwater telecommunications and the latest quantum technologies such as optical atomic clocks and atom interferometry.

Paper Details

Date Published: 11 May 2017
PDF: 8 pages
Proc. SPIE 10238, High-Power, High-Energy, and High-Intensity Laser Technology III, 102380W (11 May 2017); doi: 10.1117/12.2269778
Show Author Affiliations
S. P. Najda, TopGaN Ltd. (Poland)
P. Perlin, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
T. Suski, Institute of High Pressure Physics (Poland)
L. Marona, Institute of High Pressure Physics (Poland)
S. Stanczyk, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
P. Wisniewski, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
R. Czernecki, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)
D. Schiavon, TopGaN Ltd. (Poland)
M. Leszczyński, TopGaN Ltd. (Poland)
Institute of High Pressure Physics (Poland)


Published in SPIE Proceedings Vol. 10238:
High-Power, High-Energy, and High-Intensity Laser Technology III
Joachim Hein, Editor(s)

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