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Proceedings Paper

Influence of Nb doping on the phase transition properties of VO2 thin films prepared by ion beam co-sputtering deposition
Author(s): Huiqun Zhu; Pengfei Li; Lite Zhao; Jiahuan Liu
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Paper Abstract

The Nb-doped VO2 thin films were successfully prepared on the glass substrates by ion beam co-sputtering at room temperature and post annealing under the air condition. The effects of the preparation processing and Nb doping on the thermal hysteresis loop and phase transition temperature of the VO2 thin films were analyzed by resistancetemperature measurement. The results show that Nb doping significantly changes the surface morphologies of VO2 thin films, and Nb-doped VO2 thin films exhibit VO2(002) preferred orientation growth with greatly improved crystallinity and orientation. Compared with pure VO2, the phase transition temperature of Nb-doped VO2 thin films drops to 40 ºC, and the width of thermal hysteresis loop narrows to 8 ºC. It is demonstrated that Nb-doped VO2 thin films prepared by ion beam co-sputtered at room temperature have an obvious thermal sensitive effect, and keep a good characteristic from metal to semiconductor phase transition.

Paper Details

Date Published: 8 March 2017
PDF: 6 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 1025558 (8 March 2017); doi: 10.1117/12.2268724
Show Author Affiliations
Huiqun Zhu, Wuyi Univ. (China)
Pengfei Li, Wuyi Univ. (China)
Lite Zhao, Wuyi Univ. (China)
Jiahuan Liu, Wuyi Univ. (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

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