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Proceedings Paper

Study on flawed surface of GaAs epitaxial wafer in the process of wet chemical etching
Author(s): Hongjin Qiu; Canglu Hu; Chaxia Peng; Kai Qiao; Xin Guo; Xuchuan Liu
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Paper Abstract

The flawed surface of GaAs/GaAlAs heterointerface after wet etching by H2O2 and NH4OH based etch ant was studied in this work. The results showed that the surface of GaAs/GaAlAs heterointerface had convex point, etching pits, pinhole, fog point, and friction scratches were investigated with a etch step measurement. And imprinting the main reasons for the formation of the etching surface defects of GaAs/GaAlAs are the poor quality of epitaxial materials, the contamination of materials surface, the unclear interface of oxidation and doping, the inhomogeneity of concentration and the operation errors. The selective etching of the GaAs/GaAlAs material eliminates some flaws and improves the quality of the etching surface of the GaAs/GaAlAs material.

Paper Details

Date Published: 8 March 2017
PDF: 10 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554Y (8 March 2017); doi: 10.1117/12.2268546
Show Author Affiliations
Hongjin Qiu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Canglu Hu, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Chaxia Peng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Kai Qiao, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Xin Guo, Science and Technology on Low-Light-Level Night Vision Lab. (China)
Xuchuan Liu, Science and Technology on Low-Light-Level Night Vision Lab. (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

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