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Proceedings Paper

Electronic structure and optical properties of P-doped GaAs film
Author(s): HongLi Shi; Bin Ren; HongChang Cheng; XiaoJun Yang
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Paper Abstract

The electronic structure and optical properties of pure and P-doped cubic-blende gallium arsenide (GaAs) for different P constants (x=0, 0.125, 0.25, 0.375) have been studied by the first-principles projected augmented plane potential approach based on the density functional theory and the generalized gradient approximation method. It shows that the P-doped material has a smaller lattice constant, which resulted in a local lattice distortion. The minimum of the conduction band moves to high energy level and the band gaps gradually become wide with gradual increase concentration of P impurity. The dielectric function are calculated based on Kramers-Kroning relations. The optical property studied from the calculated absorption coefficients shows that the adsorption peaks change obviously in the visible light wavelength area for the P-doped GaAs system.

Paper Details

Date Published: 8 March 2017
PDF: 5 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554V (8 March 2017); doi: 10.1117/12.2268502
Show Author Affiliations
HongLi Shi, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Co., Ltd. (China)
Bin Ren, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Co., Ltd. (China)
HongChang Cheng, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Co., Ltd. (China)
XiaoJun Yang, Science and Technology on Low-Light-Level Night Vision Lab. (China)
North Night Vision Technology Co., Ltd. (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

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