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Tunnel electron photoemission in the nanoscale DLC film structure with electrostatic field localization
Author(s): Nikolay P. Aban'shin; Garif G. Akchurin; Yuri A. Avetisyan; Alexander P. Loginov; Denis S. Mosiyash; Alexander N. Yakunin
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Paper Abstract

The phenomenon of electron tunnel photoemission from the DLC film structure is discussed. Planar multi-electrode structure provides formation of zones of localization the electrostatic field of a certain topology. Under the influence of a strong electrostatic field, both equilibrium and nonequilibrium (photoexcited or "hot") electrons tunnel into the vacuum from the zone of concentration of electrostatic field. The results of experimental studies and theoretical simulations of the process show the saturation of photoemission current component with an increase in operating voltage. This fact makes it possible to realize the high-speed control of the spectral sensitivity of the photosensor. This is fundamentally important for applications in the modern electronic and photonic devices.

Paper Details

Date Published: 14 April 2017
PDF: 7 pages
Proc. SPIE 10337, Saratov Fall Meeting 2016: Laser Physics and Photonics XVII; and Computational Biophysics and Analysis of Biomedical Data III, 1033707 (14 April 2017); doi: 10.1117/12.2268436
Show Author Affiliations
Nikolay P. Aban'shin, Volga-Svet Co. Ltd. (Russian Federation)
Institute of Precision Mechanics and Control (Russian Federation)
Garif G. Akchurin, Institute of Precision Mechanics and Control (Russian Federation)
Saratov State Univ. (Russian Federation)
Yuri A. Avetisyan, Institute of Precision Mechanics and Control (Russian Federation)
Alexander P. Loginov, Volga-Svet Co. Ltd. (Russian Federation)
Denis S. Mosiyash, Volga-Svet Co. Ltd. (Russian Federation)
Alexander N. Yakunin, Institute of Precision Mechanics and Control (Russian Federation)


Published in SPIE Proceedings Vol. 10337:
Saratov Fall Meeting 2016: Laser Physics and Photonics XVII; and Computational Biophysics and Analysis of Biomedical Data III
Vladimir L. Derbov; Dmitry Engelevich Postnov; Vladimir L. Derbov; Dmitry Engelevich Postnov, Editor(s)

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