Share Email Print
cover

Proceedings Paper

Effect of ZnO buffer layer on phase transition properties of vanadium dioxide thin films
Author(s): Huiqun Zhu; Lekang Li; Chunbo Li
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

VO2 thin films were prepared on ZnO buffer layers by DC magnetron sputtering at room temperature using vanadium target and post annealing at 400 °C. The ZnO buffer layers with different thickness deposited on glass substrates by magnetron sputtering have a high visible and near infrared optical transmittance. The electrical resistivity and the phase transition properties of the VO2/ZnO composite thin films in terms of temperature were investigated. The results showed that the resistivity variation of VO2 thin film with ZnO buffer layer deposited for 35 min was 16 KΩ-cm. The VO2/ZnO composite thin films exhibit a reversible semiconductor-metal phase transition at 48 °C.

Paper Details

Date Published: 8 March 2017
PDF: 6 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554R (8 March 2017); doi: 10.1117/12.2268433
Show Author Affiliations
Huiqun Zhu, Wuyi Univ. (China)
Lekang Li, Wuyi Univ. (China)
Chunbo Li, Wuyi Univ. (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

© SPIE. Terms of Use
Back to Top