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Proceedings Paper

The conditions for femtosecond laser melting of silicon under two different models
Author(s): Zhi-ming Li; Xi Wang; Jin-song Nie
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Paper Abstract

An investigation of silicon melting occurring under femtosecond laser irradiation has been presented, The two-temperature model and photoionization model are introduced to calculate the free-carrier intensity’s evolution with time. In both models, the electrons density’s evolution under laser fluence F0 = 0.2 ,0.3, 0.5J / cm2 are performed. The maximum density reaching the threshold density for SPP excitation by these two model are discussed. For both single pulse and double pulse, according to the simulation data, the two temperature model have a more agreement with the experiment results.

Paper Details

Date Published: 8 March 2017
PDF: 8 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102554G (8 March 2017); doi: 10.1117/12.2268354
Show Author Affiliations
Zhi-ming Li, Electronic Engineering Institute (China)
Xi Wang, Electronic Engineering Institute (China)
Jin-song Nie, Electronic Engineering Institute (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

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