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Proceedings Paper

Experimental verification of thermal damage mechanism in single junction GaAs solar cells irradiated by laser
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Paper Abstract

Three types of laser irradiating experiments on single junction GaAs solar cells with the same laser energy coupling intensity were carried out, which were irradiated by in-band (808 nm) and out-of-band (1.07 μm) continuous wave lasers respectively and simultaneously. On the basis of the changes of current-voltage characteristic curves of irradiated solar cells, the damage degrees could be divided into three stages which were gently, seriously and thoroughly damaged stages. The damage mechanism was studied from two aspects: output changes of solar cell equivalent circuit under different configuration settings, thermal analysis model. The results show that damage degrees of gently and thoroughly damaged stages is insensitive to irradiation intensity. However, the damage degree of seriously damaged stage is sensitive to irradiation intensity and this is regarded to be related to thermal decomposition of GaAs. Moreover, the increase of PN junction defects leads to performance degradation of irradiated solar cells. In conclusion, the thermal damage leads to the increase of PN junction defects, thus results in the performance degradation of cells.

Paper Details

Date Published: 12 May 2017
PDF: 7 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 1017305 (12 May 2017); doi: 10.1117/12.2268339
Show Author Affiliations
Yunpeng Li, Northwest Institute of Nuclear Technology (China)
Guobin Feng, Northwest Institute of Nuclear Technology (China)
Jianmin Zhang, Northwest Institute of Nuclear Technology (China)
Xinwei Lin, Northwest Institute of Nuclear Technology (China)
Yubin Shi, Northwest Institute of Nuclear Technology (China)
Pengcheng Dou, Northwest Institute of Nuclear Technology (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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