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Proceedings Paper

Laser method for simulating the transient radiation effects of semiconductor
Author(s): Mo Li; Peng Sun; Ge Tang; Xiaofeng Wang; Jianwei Wang; Jian Zhang
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Paper Abstract

In this paper, we demonstrate the laser simulation adequacy both by theoretical analysis and experiments. We first explain the basic theory and physical mechanisms of laser simulation of transient radiation effect of semiconductor. Based on a simplified semiconductor structure, we describe the reflection, optical absorption and transmission of laser beam. Considering two cases of single-photon absorption when laser intensity is relatively low and two-photon absorption with higher laser intensity, we derive the laser simulation equivalent dose rate model. Then with 2 types of BJT transistors, laser simulation experiments and gamma ray radiation experiments are conducted. We found good linear relationship between laser simulation and gammy ray which depict the reliability of laser simulation.

Paper Details

Date Published: 12 May 2017
PDF: 6 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730L (12 May 2017); doi: 10.1117/12.2268331
Show Author Affiliations
Mo Li, China Academy of Engineering Physics (China)
Peng Sun, China Academy of Engineering Physics (China)
Ge Tang, China Academy of Engineering Physics (China)
Chongqing Univ. (China)
Xiaofeng Wang, China Academy of Engineering Physics (China)
Jianwei Wang, China Academy of Engineering Physics (China)
Jian Zhang, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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