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Proceedings Paper

Mg2SixSn1-xheterostructures on Si(111) substrate for optoelectronics and thermoelectronics
Author(s): Nikolay G. Galkin; Konstantin N. Galkin; Sergey A. Dotsenko; Igor M. Chernev; Andrei M. Maslov; L. Dózsa; B. Pécz; Z. Osváth; I. Cora; D. B. Migas; R. Kudrawiec; J. Misiewicz
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Paper Abstract

Thin (50-90 m) non-doped and doped (by Al atoms) Mg2Sn0.6Si0.4 and Mg2Sn0.4Si0.6films with roughness of 1.9-3.7 nm have been grown by multiple deposition and single annealing at 150 °C of multilayers formed by repetition deposition of three-layers (Si-Sn-Mg) on Si(111) p-type wafers with 45 Ω-cm resistivity. Transmission electron microscopy has shown that the first forming layer is an epitaxial layer of hex-Mg2Sn(300) on Si(111) substrate with thickness not more than 5-7 nm. Epitaxial relationships:hex-Mg2Sn(300)|| Si(111), hex-Mg2Sn[001]|| Si[-112] and hex-Mg2Sn[030]||Si[110] have been found for the epitaxial layer. But inclusions of cub-Mg2Si were also observed inside hex-Mg2Sn layer. It was found that the remaining part of the film thickness is in amorphous state and has a layered distribution of major elements: Mg, Sn and Mg without exact chemical composition. It was established by optical spectroscopy data that both type films are semiconductor with undispersed region lower 0.18 eV with no= 3.59 ± 0.01, but only two direct interband transitions with energies 0.75-0.76 eV and 1.2 eV have been determined. The last interband transition has been confirmed by photoreflectance data at room temperature. Fourier transmittance spectroscopy and Raman spectroscopy data have established the formation of stannide, silicide and ternary compositions.

Paper Details

Date Published: 14 December 2016
PDF: 13 pages
Proc. SPIE 10176, Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics, 1017604 (14 December 2016); doi: 10.1117/12.2268266
Show Author Affiliations
Nikolay G. Galkin, Institute for Automation and Control Processes (Russian Federation)
Konstantin N. Galkin, Institute for Automation and Control Processes (Russian Federation)
Sergey A. Dotsenko, Institute for Automation and Control Processes (Russian Federation)
Igor M. Chernev, Institute for Automation and Control Processes (Russian Federation)
Andrei M. Maslov, Institute for Automation and Control Processes (Russian Federation)
L. Dózsa, Ctr. for Energy Research (Hungary)
B. Pécz, Ctr. for Energy Research (Hungary)
Z. Osváth, Ctr. for Energy Research (Hungary)
I. Cora, Ctr. for Energy Research (Hungary)
D. B. Migas, Belarusian State Univ. of Informatics and Radioelectronics (Belarus)
R. Kudrawiec, Wroclaw Univ. of Science and Technology (Poland)
J. Misiewicz, Wroclaw Univ. of Science and Technology (Poland)


Published in SPIE Proceedings Vol. 10176:
Asia-Pacific Conference on Fundamental Problems of Opto- and Microelectronics
Yuri N. Kulchin; Roman V. Romashko; Alexander V. Syuy, Editor(s)

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