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Proceedings Paper

Millisecond laser induced thermal stress on GaAs wafer
Author(s): Bohua Li; Zhonghua Shen; Jian Lu; Xiaowu Ni
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Paper Abstract

In order to investigate the thermal stresses field of GaAs during the millisecond pulsed laser irradiation, a 3D numerical model has been established based on the thermoelastic theory with the finite element method (FEM). T he 12 slip systems can be obtained to describe the dynamic change process of resolved shear stress field of GaAs during the laser irradiation. The results show that the thermal slips are firstly activated below the spot area of laser when the thermal shear stresses of slip systems surpass the critical yield stress, and this comes out before the melting of GaAs surface. Brittle cracks occur in the initiation points offered by the thermal slips, and this can greatly reduce the photoelectric performance of GaAs. The calculated stresses distribution indicate that the fracture mostly occurs at the boundary of the laser spot and the center, which is consistent with the experimental result.

Paper Details

Date Published: 12 May 2017
PDF: 6 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 1017304 (12 May 2017); doi: 10.1117/12.2268163
Show Author Affiliations
Bohua Li, Nanjing Univ. of Science and Technology (China)
Zhonghua Shen, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)
Xiaowu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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