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Proceedings Paper

Real-time detection of laser-GaAs interaction process
Author(s): Zhichao Jia; Zewen Li; Xueming Lv; Xiaowu Ni
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Paper Abstract

A real-time method based on laser scattering technology was used to detect the interaction process of GaAs with a 1080 nm laser. The detector collected the scattered laser beam from the GaAs wafer. The main scattering sources were back surface at first, later turn into front surface and vapor, so scattering signal contained much information of the interaction process. The surface morphologies of GaAs with different irradiation times were observed using an optical microscope to confirm occurrence of various phenomena. The proposed method is shown to be effective for the real-time detection of GaAs. By choosing a proper wavelength, the scattering technology can be promoted in detection of thicker GaAs wafer or other materials.

Paper Details

Date Published: 12 May 2017
PDF: 7 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 1017307 (12 May 2017); doi: 10.1117/12.2268115
Show Author Affiliations
Zhichao Jia, Nanjing Univ. of Science and Technology (China)
Zewen Li, Nanjing Univ. of Science and Technology (China)
Xueming Lv, Nanjing Univ. of Science and Technology (China)
Xiaowu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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