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Proceedings Paper

Fabrication of GaN quantum dots by MOCVD for intersubband transitions infrared detectors
Author(s): Zhiqiang Qi; Rui Yang; Cheng Zeng; Wenliang Hu; Zhijie Zhang; Chensheng Wang
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Paper Abstract

The inter-sub-band transitions of GaN quantum dots are in the infrared spectrum, which have enormous potentials in fabrication the high-performance infrared detectors. In this letter, the growth of multi-layer stacks of GaN quantum dots have been grown via MOCVD, including the growth of AlN buffer, GaN quantum dots and AlN caplayer. In the end, the multi-layer GaN quantum dots with uniform-size and excellent optical performance have been obtained, which are verified by the AFM and photoluminescense results.

Paper Details

Date Published: 8 March 2017
PDF: 6 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 102553Z (8 March 2017); doi: 10.1117/12.2268069
Show Author Affiliations
Zhiqiang Qi, Huazhong Institute of Electro-Optics-Wuhan National Lab. for Optoelectronics (China)
Rui Yang, Huazhong Institute of Electro-Optics-Wuhan National Lab. for Optoelectronics (China)
Cheng Zeng, Huazhong Institute of Electro-Optics-Wuhan National Lab. for Optoelectronics (China)
Wenliang Hu, Huazhong Institute of Electro-Optics-Wuhan National Lab. for Optoelectronics (China)
Zhijie Zhang, Huazhong Institute of Electro-Optics-Wuhan National Lab. for Optoelectronics (China)
Chensheng Wang, Huazhong Institute of Electro-Optics-Wuhan National Lab. for Optoelectronics (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

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