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Proceedings Paper

Performance degradation of Si device with the change of carrier lifetime under laser irradiation
Author(s): Yubin Shi; Jianming Zhang; Xinwei Lin; Zhen Zhang; Zuodong Xu; Deyan Cheng
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Paper Abstract

In the paper, the performance of Si devices with change of carrier lifetime was reported with finite volume method. In the two-dimensional axisymmetric semiconductor model, based on Si p-n junction structure, direct recombination, auger recombination and the SRH (Shockley-Ready-Hall) recombination were taken into consideration. Both cathode and anode was made via ohmic contact. Two kinds of device models with p+-n or n+-p type were built accordingly. 1064 nm laser was used as signal beam in the model. Numerical simulation had been studied under different bias voltage and carrier lifetime. Compared with the results, it was found that the device performance was affected by the minority carrier lifetime obviously. It also inferred that performance of Si devices was degenerated by laser indirectly.

Paper Details

Date Published: 12 May 2017
PDF: 10 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730I (12 May 2017); doi: 10.1117/12.2267931
Show Author Affiliations
Yubin Shi, Northwest Institute of Nuclear Technology (China)
Jianming Zhang, Northwest Institute of Nuclear Technology (China)
Xinwei Lin, Northwest Institute of Nuclear Technology (China)
Zhen Zhang, Northwest Institute of Nuclear Technology (China)
Zuodong Xu, Northwest Institute of Nuclear Technology (China)
Deyan Cheng, Northwest Institute of Nuclear Technology (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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