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Proceedings Paper

Mid- and near-infrared Si waveguides for sensing applications (Conference Presentation)
Author(s): Carlos A. Alonso-Ramos; Xavier Le Roux; Daniel Benedikovic; Vladyslav Vakarin; Elena Durán-Valdeiglesias; Diego Pérez-Galacho; Eric Cassan; Delphine Marris-Morini; Pavel Cheben; Laurent Vivien

Paper Abstract

The large transparency window of silicon (1.1 - 8 μm wavelength range) makes it a promising material for the implementation of on-chip sensors operating over an ultra-wide wavelength range. However, the implementation of the silicon-on-insulator platform is restricted by the absorption of buried oxide layer for wavelengths above 4 μm. Here, we report our advances in development of silicon waveguides for broadband operation extending from near- to mid-infrared wavelengths. We present suspended silicon waveguides that exploit a novel periodic corrugation approach to circumvent the buried oxide absorption problem and provide effective single mode operation simultaneously for near- and mid-infrared wavelengths.

Paper Details

Date Published: 16 June 2017
PDF: 1 pages
Proc. SPIE 10249, Integrated Photonics: Materials, Devices, and Applications IV, 102490A (16 June 2017); doi: 10.1117/12.2267868
Show Author Affiliations
Carlos A. Alonso-Ramos, Univ. Paris Sud, C2N (France)
Xavier Le Roux, Univ. Paris Sud, C2N (France)
Daniel Benedikovic, Univ. Paris Sud, C2N (France)
Vladyslav Vakarin, Univ. Paris Sud, C2N (France)
Elena Durán-Valdeiglesias, Univ. Paris Sud, C2N (France)
Diego Pérez-Galacho, Univ. Paris Sud, C2N (France)
Eric Cassan, Univ. Paris Sud, C2N (France)
Delphine Marris-Morini, Univ. Paris Sud, C2N (France)
Pavel Cheben, National Research Council of Canada (Canada)
Laurent Vivien, Univ. Paris Sud, C2N (France)


Published in SPIE Proceedings Vol. 10249:
Integrated Photonics: Materials, Devices, and Applications IV
Jean-Marc Fédéli; Laurent Vivien, Editor(s)

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