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Proceedings Paper

The infrared spectra and laser damage threshold of the fused silica after megacoustic field assisted hydrofluoric-based etching
Author(s): Yuan Li; Ke Yang; Caizhen Yao; Zhiqiang Wang; Xiaodong Yuan; Hongwei Yan; Xin Ju; Liming Yang
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Paper Abstract

The laser-induced damage of fused silica optics significantly restricts the output ability of large laser systems. Hydrofluoric (HF)-based etching is an effective processing to eliminate impurities and mitigate subsurface defects. Traditional polished fused silica samples were etched for different time in a HF-based etchant (2.3% HF and 11.4% NH4F) assisted by a 1.3 MHz megacoustic field. The laser-induced damage thresholds (LIDT) were measured by R-on-1 method, and fourier transform infrared absorption spectras of the samples were obtained. The results of the LIDT demonstrated that the LIDTs of the fused silica samples increased after megacoustic field assisted etching. The more surface materials were removed, the higher LIDT was obtained. The analysis of the infrared spectra illustrated that structural densification materials were removed during the etching, and thus the LIDT can be improved.

Paper Details

Date Published: 12 May 2017
PDF: 6 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730C (12 May 2017); doi: 10.1117/12.2267745
Show Author Affiliations
Yuan Li, Univ. of Science and Technology Beijing (China)
China Academy of Engineering Physics (China)
Ke Yang, China Academy of Engineering Physics (China)
Caizhen Yao, China Academy of Engineering Physics (China)
Zhiqiang Wang, China Academy of Engineering Physics (China)
Xiaodong Yuan, China Academy of Engineering Physics (China)
Hongwei Yan, China Academy of Engineering Physics (China)
Xin Ju, Univ. of Science and Technology Beijing (China)
Liming Yang, China Academy of Engineering Physics (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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