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Proceedings Paper

Sn nanothreads in GaAs: experiment and simulation
Author(s): I. Semenikhin; V. Vyurkov; A. Bugaev; R. Khabibullin; D. Ponomarev; A. Yachmenev; P. Maltsev; M. Ryzhii; T. Otsuji; V. Ryzhii
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Paper Abstract

The gated GaAs structures like the field-effect transistor with the array of the Sn nanothreads was fabricated via delta-doping of vicinal GaAs surface by Sn atoms with a subsequent regrowth. That results in the formation of the chains of Sn atoms at the terrace edges. Two device models were developed. The quantum model accounts for the quantization of the electron energy spectrum in the self-consistent two-dimensional electric potential, herewith the electron density distribution in nanothread arrays for different gate voltages is calculated. The classical model ignores the quantization and electrons are distributed in space according to 3D density of states and Fermi-Dirac statistics. It turned out that qualitatively both models demonstrate similar behavior, nevertheless, the classical one is in better quantitative agreement with experimental data. Plausibly, the quantization could be ignored because Sn atoms are randomly placed along the thread axis. The terahertz hot-electron bolometers (HEBs) could be based on the structure under consideration.

Paper Details

Date Published: 30 December 2016
PDF: 10 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240R (30 December 2016); doi: 10.1117/12.2267241
Show Author Affiliations
I. Semenikhin, Institute of Physics and Technology (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
V. Vyurkov, Institute of Physics and Technology (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
A. Bugaev, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
R. Khabibullin, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
D. Ponomarev, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
A. Yachmenev, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
Bauman Moscow State Technical Univ. (Russian Federation)
P. Maltsev, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
M. Ryzhii, Univ. of Aizu (Japan)
T. Otsuji, Tohoku Univ. (Japan)
V. Ryzhii, Institute of Ultra-High Frequency Semiconductor Electronics (Russian Federation)
Tohoku Univ. (Japan)
Bauman Moscow State Technical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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