Share Email Print
cover

Proceedings Paper

Method of stress and measurement modes for research of thin dielectric films of MIS structures
Author(s): Vladimir V. Andreev; Vladimir M. Maslovsky; Dmitrii V. Andreev; Alexander A. Stolyarov
Format Member Price Non-Member Price
PDF $14.40 $18.00
cover GOOD NEWS! Your organization subscribes to the SPIE Digital Library. You may be able to download this paper for free. Check Access

Paper Abstract

The paper proposes a new method of stress and measurement modes for research of thin dielectric films of MIS structures. The method realizes injection of the most part of charge into gate dielectric in one of stress modes: either current owing through dielectric is constant or voltage applied to gate is constant. In order to acquire an additional information about changing of charge state of MIS structure, the stress condition is interrupted in certain time ranges and during these time ranges the mode, in which structure is, is the mode of measurement. In measurement mode, changing of electric fields at interfaces between dielectric and semiconductor is monitored. By using these data, density of charge, which is accumulated in gate dielectric, and its centroid are calculated. Besides, by using these data, one studies processes of generation and relaxation of charge in dielectric. In order to raise precision of the method and reduce an influence of switching effects in measurement mode, density of measurement current should be much lower than density of stress current.

Paper Details

Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022429 (30 December 2016); doi: 10.1117/12.2267173
Show Author Affiliations
Vladimir V. Andreev, Bauman Moscow State Technical Univ. (Russian Federation)
Vladimir M. Maslovsky, Zelenograd Research Institute of Physical Problems (Russian Federation)
Dmitrii V. Andreev, Bauman Moscow State Technical Univ. (Russian Federation)
Alexander A. Stolyarov, Bauman Moscow State Technical Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

© SPIE. Terms of Use
Back to Top