Share Email Print
cover

Proceedings Paper

Compact modeling of radiation-induced drain leakage current
Author(s): M. G. Drosdetsky; V. V. Orlov; G. I. Zebrev
Format Member Price Non-Member Price
PDF $14.40 $18.00

Paper Abstract

A compact MOSFET model is described, which is adapted to simulate the drain current under irradiation.

Paper Details

Date Published: 30 December 2016
PDF: 5 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022415 (30 December 2016); doi: 10.1117/12.2267161
Show Author Affiliations
M. G. Drosdetsky, National Research Nuclear Univ. MEPhI (Russian Federation)
V. V. Orlov, National Research Nuclear Univ. MEPhI (Russian Federation)
G. I. Zebrev, National Research Nuclear Univ. MEPhI (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

© SPIE. Terms of Use
Back to Top