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Proceedings Paper

Chemical surface treatment of Ge2Sb2Te5 thin films for phase change memory application
Author(s): M. S. Mikhailova; S. Y. Nemtseva; V. B. Glukhenkaya; P. I. Lazarenko; A. A. Sherchenkov; S. A. Kozyukhin; S. P. Timoshenkov
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Paper Abstract

Influence of the alkalis (KOH, NaOH), acids (HNO3, HCl, H3PO4, H2SO4) and solvents (C3H7NO, deionized water) on the Ge2Sb2Te5 thin films was investigated. Most possible etching mechanism of GST225 thin films by HNO3 solution was proposed.

Paper Details

Date Published: 30 December 2016
PDF: 7 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240F (30 December 2016); doi: 10.1117/12.2267157
Show Author Affiliations
M. S. Mikhailova, National Research Univ. of Electronic Technology (Russian Federation)
S. Y. Nemtseva, National Research Univ. of Electronic Technology (Russian Federation)
V. B. Glukhenkaya, National Research Univ. of Electronic Technology (Russian Federation)
P. I. Lazarenko, National Research Univ. of Electronic Technology (Russian Federation)
A. A. Sherchenkov, National Research Univ. of Electronic Technology (Russian Federation)
S. A. Kozyukhin, Kurnakov Institute of General and Inorganic Chemistry (Russian Federation)
S. P. Timoshenkov, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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