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Proceedings Paper

Study of morphological characteristic of por-Si formed using metal-assisted chemical etching by BET-method and fractal geometry
Author(s): Anton N. Boyko; Olga V. Pyatilova; Rustam M. Kalmykov; Dahir S. Gaev; Sergei P. Timoshenkov; Sergei A. Gavrilov
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Paper Abstract

Study of new materials and composites based on porous silicon is of great interest for electronics and microelectronics industry. Functional characteristics of structured layers are closely associated with their morphology properties and treatment conditions correspondently. In this work a porous silicon layers formed by metal-assisted chemical etching (MACE) with the use of gas adsorption-desorption method, scanning electron microscopy (SEM) and fractal geometry have been examined. Specific surface area given by multi-point BET method was about of 7 m2/g and 13 m2/g for n-Si and p-Si specimens correspondently. Surface fractal dimension Ds was estimated for p-type mesoporous silicon from BET results using Neimark’s thermodynamic approach, the value is Ds=2.86. “Slit islands” Mandelbrot’s algorithm was applied for analysis of SEM images and calculations of surface fractal dimension Ds, computation gives Ds = 2.52 for n-Si sample and Ds = 2.84 for p-Si sample. The study testified the fractal nature of porous layers formed by MACE and exhibits correlation between different methods of fractal dimension estimation. The results can be applied for improvement of methods of structured solids characterization.

Paper Details

Date Published: 30 December 2016
PDF: 6 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240H (30 December 2016); doi: 10.1117/12.2267147
Show Author Affiliations
Anton N. Boyko, National Research Univ. of Electronic Technology (Russian Federation)
Olga V. Pyatilova, National Research Univ. of Electronic Technology (Russian Federation)
Rustam M. Kalmykov, Kabardino-Balkarian State Univ. (Russian Federation)
Dahir S. Gaev, Kabardino-Balkarian State Univ. (Russian Federation)
Sergei P. Timoshenkov, National Research Univ. of Electronic Technology (Russian Federation)
Sergei A. Gavrilov, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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