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Proceedings Paper

Investigation of the reactive ion etching of Ge2Sb2Te5 thin films
Author(s): A. Shulyatev; A. Sherchenkov; D. Gromov; P. Lazarenko; A. Sysa; A. Kozmin
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Paper Abstract

Process of reactive ion etching of Ge2Sb2Te5 thin film was studied in the work. It was found that Ar+O2 gas mixture has a minimum etching rate (7.4 nm/min) and Ar+SF6 (37.0 nm/min) mixtures have highest etching rate. Surface roughness decreased from ~0.8 nm before etching to the value of ~0.5 nm after etching. EDXRA showed the absence of the contamination by the components of the gas mixtures after the etching.

Paper Details

Date Published: 30 December 2016
PDF: 4 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241Y (30 December 2016); doi: 10.1117/12.2267138
Show Author Affiliations
A. Shulyatev, National Research Univ. of Electronic Technology (Russian Federation)
A. Sherchenkov, National Research Univ. of Electronic Technology (Russian Federation)
D. Gromov, National Research Univ. of Electronic Technology (Russian Federation)
P. Lazarenko, National Research Univ. of Electronic Technology (Russian Federation)
A. Sysa, National Research Univ. of Electronic Technology (Russian Federation)
A. Kozmin, National Research Univ. of Electronic Technology (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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