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Proceedings Paper

Mechanical properties of bimetallic one-dimensional structures
Author(s): Ekaterina M. Smelova; Ivan I. Sitnikov; Vladimir S. Zelensky; Kseniya M. Tsysar; Valery G. Andreev; Vladimir A. Vdovin; Alexander M. Saletsky
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Paper Abstract

Mechanical properties of freestanding Au-Mn nanowires and Au-Mn nanowire on a Cu (110) substrate are studied with ab initio theoretical approach. The calculations were carried out using the software package Vienna Ab-initio Simulation Package (VASP), which is based on the density functional theory (DFT). It was shown that the breaking force (0.45nN) as well as the interatomic distance at a breaking point in bimetallic nanowire (3.0 Å) are higher than in one component Au wire (0.4 nN and 2.6Å respectively). Relative elongation of 15 % results in a fracture of bimetallic nanowire.

We studied the mechanical response of the nanojunction in a form of three-atomic Au chain aligned vertically between two pyramidal gold electrodes and demonstrated that the breaking of nanocontact depends only the interaction between Au atoms in the chain and dependents slightly on the structure and properties of the atomic structure of the electrodes.

Paper Details

Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022406 (30 December 2016); doi: 10.1117/12.2267129
Show Author Affiliations
Ekaterina M. Smelova, Lomonosov Moscow State Univ. (Russian Federation)
Ivan I. Sitnikov, Lomonosov Moscow State Univ. (Russian Federation)
Vladimir S. Zelensky, Lomonosov Moscow State Univ. (Russian Federation)
Kseniya M. Tsysar, Lomonosov Moscow State Univ. (Russian Federation)
Valery G. Andreev, Lomonosov Moscow State Univ. (Russian Federation)
Vladimir A. Vdovin, Kotel’nikov Institute of Radio Engineering and Electronics (Russian Federation)
Alexander M. Saletsky, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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