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Proceedings Paper

Radio frequency sputtered AlxNy thin films for thermal detectors
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Paper Abstract

This work presents the deposition and characterization of AlxNy thin films for using them as pyroelectric detector material. To test the pyroelectric effect, capacitors with Au electrodes were fabricated. The diameter of the electrodes for capacitor used was 1100 μm while the distances between these two electrodes was 2200 μm. On a 3- inch diameter cleaned silicon wafer a 100-nm thick AlxNy films were deposited using an Al target and Ar:N2 = 1:1 flow and 5 mTorr chamber pressure. Finally, a 100-nm thick Au layer was deposited and lifted off by using conventional photo lithography to form the electrodes of capacitors. All the layers were deposited by radio frequency sputtering at room temperature. The AlxNy thin films were annealed at 700 0C in N2 environment for 10 minutes. X-ray diffraction showed that the films are poly-crystalline with peaks in (100), (002) and (101) directions. The pyroelectric current increased from 3.38 × 10-14 A at 303 K to 1.75 × 10-13 at 353 K. When the temperature varied between 303 K to 353 K the pyroelectric coefficient was increased from 8.60 × 10-9 C/m2K to 3.76 × 10-8 C/m2K while the loss tangent remains almost constant to ~1.5 × 10-5 when the temperature was varied in the same range.

Paper Details

Date Published: 28 April 2017
PDF: 10 pages
Proc. SPIE 10209, Image Sensing Technologies: Materials, Devices, Systems, and Applications IV, 102090J (28 April 2017); doi: 10.1117/12.2267089
Show Author Affiliations
Nicholas Calvano, Delaware State Univ. (United States)
Philip Chrostoski, Delaware State Univ. (United States)
Andrew Voshell, Delaware State Univ. (United States)
Keesean Braithwaite, Delaware State Univ. (United States)
Dennis Prather, Univ. of Delaware (United States)
Murzy Jhabvala, NASA Goddard Space Flight Ctr. (United States)
Mukti Rana, Delaware State Univ. (United States)


Published in SPIE Proceedings Vol. 10209:
Image Sensing Technologies: Materials, Devices, Systems, and Applications IV
Nibir K. Dhar; Achyut K. Dutta, Editor(s)

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