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Proceedings Paper

The spatially dispersive eigenvalues of permittivity operator and frequency-dependent surface impedance for conductors without the dc dissipation
Author(s): M. A. Dresvyannikov; A. P. Chernyaev; A. L. Karuzskii; Yu. A. Mityagin; A. V. Perestoronin; N. A. Volchkov
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Paper Abstract

An operator of the permittivity can completely describe alone a microwave response of conductors with the spatial dispersion. An eigenvalue problem for the nonself-adjoint permittivity operator a was considered generally to search the wave solutions for conductors and superconductors. An appearance of additional solutions (additional waves) due to the spatial dispersion can strongly influence the properties of nanoelectronic devices or novel superconducting materials in the form of anomalous losses for example, and should be accounted in simulation and modeling of micro- and nanoelectronic devices. It was concluded that the modulus |Ž| of the surface impedance is proportional to the degree of frequency ω2/3 for all normal conductor solutions except that for the superconductor. There was some criticism related to the idea that the electrodynamics of superconductors should be in principle reduced to those for conductors as the temperature approaches and beyond the critical temperature. We demonstrate that appropriately taken into account effects of the spatial dispersion can give the general frequency dependence of the surface impedance for the obtained solutions including that for the superconductor. It is shown that an incorporation of the spatial dispersion leads to an appearance of the Meissner effect in perfect conductors in the same manner as in superconductors.

Paper Details

Date Published: 30 December 2016
PDF: 7 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022412 (30 December 2016); doi: 10.1117/12.2267086
Show Author Affiliations
M. A. Dresvyannikov, P.N. Lebedev Physical Institute (Russian Federation)
A. P. Chernyaev, P.N. Lebedev Physical Institute (Russian Federation)
A. L. Karuzskii, P.N. Lebedev Physical Institute (Russian Federation)
Yu. A. Mityagin, P.N. Lebedev Physical Institute (Russian Federation)
A. V. Perestoronin, P.N. Lebedev Physical Institute (Russian Federation)
N. A. Volchkov, P.N. Lebedev Physical Institute (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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