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Proceedings Paper

Low resistance Ti/Si/Ti/Al/Ni/Au ohmic contact for AlGaN/GaN HEMT
Author(s): Stanislav A. Shostachenko; Roman V. Zakharchenko; Roman V. Ryzhuk; Darya A. Kulyamina; Nikolay I. Kargin
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Paper Abstract

This paper is dedicated to the experimental investigation of Ohmic contacts to the n+-doped region of AlGaN/GaN transistor heterostructure based on Ti/Si/Ti/Al/Ni/Au metallization. Effect of annealing temperature on the specific resistance of Ohmic contact was studied. Ohmic contact with the resistance of 3.4·10-6 Ω·cm2 was formed by optimization of the annealing temperature and introduction of the additional doping silicon layer.

Paper Details

Date Published: 30 December 2016
PDF: 5 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022403 (30 December 2016); doi: 10.1117/12.2267053
Show Author Affiliations
Stanislav A. Shostachenko, National Research Nuclear Univ. MEPhI (Russian Federation)
Roman V. Zakharchenko, National Research Nuclear Univ. MEPhI (Russian Federation)
Roman V. Ryzhuk, National Research Nuclear Univ. MEPhI (Russian Federation)
Darya A. Kulyamina, National Research Nuclear Univ. MEPhI (Russian Federation)
Nikolay I. Kargin, National Research Nuclear Univ. MEPhI (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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