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Proceedings Paper

Ambipolar memristor-based oscillator
Author(s): Vladimir V. Rakitin; Alexander V. Rakitin
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Paper Abstract

This paper considers the possibility of constructing nonreactive memristor-based oscillators adding a device exhibiting negative differential resistance (NDR). The ambipolarity of the memristor I-V characteristic is shown to ensure the generation mode of such circuits. S-type and N-type variants of the memristor-based oscillator are analyzed. Device and circuit implementations of ambipolar memristors are suggested. NDR devices, as well as single-threshold comparators can be used in the implementation of ambipolar memristor-based oscillators.

Paper Details

Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022411 (30 December 2016); doi: 10.1117/12.2266868
Show Author Affiliations
Vladimir V. Rakitin, Institute for Design Problems in Microelectronics (Russian Federation)
Alexander V. Rakitin, Lomonosov Moscow State Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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