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Proceedings Paper

Total ionizing dose effects modeling in common-gate tri-gate FinFETs using Verilog-A
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Paper Abstract

We propose a Verilog-A modeling concept for modern bulk and SOI FinFETs TID sensitivity modeling. The concept allows to model the fin width and length dependencies of TID sensitivity.

Paper Details

Date Published: 30 December 2016
PDF: 4 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022416 (30 December 2016); doi: 10.1117/12.2266864
Show Author Affiliations
Maxim S. Gorbunov, Scientific Research Institute of System Analysis (Russian Federation)
National Research Nuclear Univ. MEPhI (Russian Federation)
Gennady I. Zebrev, National Research Nuclear Univ. MEPhI (Russian Federation)
Scientific Research Institute of System Analysis (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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