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Proceedings Paper

FT-IR analysis of high temperature annealing effects in a-SiC:H thin films
Author(s): Tobias Frischmuth; Michael Schneider; Thomas Grille; U. Schmid
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Paper Abstract

Hydrogenated amorphous SiC (a-SiC:H) is an attractive material for MEMS applications where high robustness or operation in harsh environments is targeted. In previous publications, it was demonstrated, that the properties of a-SiC:H thin films can be tailored over a wide range by changing the auxiliary table excitation power of a dual plasma source deposition process using an inductively coupled plasma-enhanced chemical vapour deposition system. In this work, the annealing behavior of dual plasma source deposited a-SiC:H thin films under argon atmosphere is investigated by using Fourier transform infrared (FT-IR) spectroscopy for chemical analysis. All investigated layers show a decrease of hydrogen containing bonds (X-Hx) and an increase of Si-C bonds with increasing annealing temperature in the FT-IR spectrum. This behaviour is directly linked to the effusion of hydrogen from the thin films at elevated temperatures. In addition, films deposited at higher auxiliary plasma power show more X-Hx and less Si-C bonds, indicating a higher hydrogen amount in those films. All layers shrink with increasing annealing temperature due to the effusion of hydrogen with a stronger shrink at higher PT values caused by the increased hydrogen amount. This shrink also leads to a densification of the thin films.

Paper Details

Date Published: 14 June 2017
PDF: 6 pages
Proc. SPIE 10246, Smart Sensors, Actuators, and MEMS VIII, 102460R (14 June 2017); doi: 10.1117/12.2266844
Show Author Affiliations
Tobias Frischmuth, Technische Univ. Wien (Austria)
Michael Schneider, Technische Univ. Wien (Austria)
Thomas Grille, Infineon Technologies Austria AG (Austria)
U. Schmid, Technische Univ. Wien (Austria)


Published in SPIE Proceedings Vol. 10246:
Smart Sensors, Actuators, and MEMS VIII
Luis Fonseca; Mika Prunnila; Erwin Peiner, Editor(s)

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