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Proceedings Paper

HfO2/Pr2O3 gate dielectric stacks
Author(s): F. Sidorov; A. Molchanova; A. Rogozhin
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Paper Abstract

Electrical properties of MOS structures based on molecular beam epitaxy formed HfO2/Pr2O3 gate dielectric stacks have been studied by CV, GV and IV characteristics. Electrical properties of the structures with HfO2/Pr2O3 and PEALD HfO2 dielectric layers were compared. Higher gate leakage current and lower interface trap level density in the structure with HfO2/Pr2O3 dielectric layer was observed.

Paper Details

Date Published: 30 December 2016
PDF: 7 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 1022402 (30 December 2016); doi: 10.1117/12.2266784
Show Author Affiliations
F. Sidorov, Institute of Physics and Technology (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
A. Molchanova, Institute of Physics and Technology (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)
A. Rogozhin, Institute of Physics and Technology (Russian Federation)
Moscow Institute of Physics and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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