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Proceedings Paper

Resistive switching of vertically aligned carbon nanotube by a compressive strain
Author(s): Marina V. Ilina; Yuriy F. Blinov; Oleg I. Ilin; Viktor S. Klimin; Oleg A. Ageev
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Paper Abstract

The resistive switching of vertically aligned carbon nanotube (VA CNT) by the action of a compressive strain is shown. The memory cell based on compressed VA CNT has been created. Origin of resistive switching of strained VA CNT is described. It is shown the resistive switching associated with redistribution of deformation and corresponding piezoelectric charge in the nanotube. The ration resistance of high-resistance to low-resistance states of the memory cell amounts 7 at voltage reading of 0.2 V. The results can be used in the development nanoelectronics devices based on VA CNTs, including the resistive random-access memory.

Paper Details

Date Published: 30 December 2016
PDF: 4 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102240U (30 December 2016); doi: 10.1117/12.2266762
Show Author Affiliations
Marina V. Ilina, Southern Federal Univ. (Russian Federation)
Yuriy F. Blinov, Southern Federal Univ. (Russian Federation)
Oleg I. Ilin, Southern Federal Univ. (Russian Federation)
Viktor S. Klimin, Southern Federal Univ. (Russian Federation)
Oleg A. Ageev, Southern Federal Univ. (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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