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Proceedings Paper

The growth characters of InSb/GaSb quantum dots by LP-MOCVD
Author(s): Shengtao Yu; Xiaohuan Lu; Bin Zhang; Cui Xiong; Chen Cai; Liankai Wang
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Paper Abstract

InSb quantum dots of high quality and high density is grown epitaxially by LP-MOCVD technology on GaSb substrate, and some parameters influenced surface pattern of InSb is analyzed such as source flow, phase V/III ratio, growth temperature, pressure in reaction chamber, etc. Experiment obtained a set of optimized parameters of InSb/GaSb quantum dots: 475℃, 200mbar, V/III=1. Under optimized epitaxial parameters, using atomic-like layer growth pattern and connecting In and Sb organic source for four times alternatively can prepare InSb/GaSb quantum dots whose density can be up to 1.69×1010cm-2.

Paper Details

Date Published: 8 March 2017
PDF: 5 pages
Proc. SPIE 10255, Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016, 1025536 (8 March 2017); doi: 10.1117/12.2266716
Show Author Affiliations
Shengtao Yu, Changchun Univ. of Science and Technology (China)
Xiaohuan Lu, Changchun Univ. of Science and Technology (China)
Bin Zhang, Changchun Univ. of Science and Technology (China)
Cui Xiong, Changchun Univ. of Science and Technology (China)
Chen Cai, Changchun Univ. of Science and Technology (China)
Liankai Wang, Changchun Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10255:
Selected Papers of the Chinese Society for Optical Engineering Conferences held October and November 2016
Yueguang Lv; Jialing Le; Hesheng Chen; Jianyu Wang; Jianda Shao, Editor(s)

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