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Proceedings Paper

Comparative study of CF4- and CHF3-based plasmas for dry etching applications
Author(s): A. Efremov; K.-H. Kwon; A. Morgunov; D. Shabadarova
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Paper Abstract

The influence of O2/Ar mixing ratio on plasma characteristics, densities and fluxes of active species determining the dry etching kinetics in both CF4/O2/Ar and CHF3/O2/Ar plasmas was studied. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of O2 for Ar at constant fraction of CF4 or CHF3 in a feed gas noticeably changes electron temperature and electron density, but does not result in the non-monotonic behavior of F atom density. The differences between two gas systems were discussed in details from the point of view of plasma chemistry.

Paper Details

Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241W (30 December 2016); doi: 10.1117/12.2266715
Show Author Affiliations
A. Efremov, State Univ. of Chemistry and Technology (Russian Federation)
K.-H. Kwon, Korea Univ. (Korea, Republic of)
A. Morgunov, State Univ. of Chemistry and Technology (Russian Federation)
D. Shabadarova, State Univ. of Chemistry and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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