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EUV multilayer defects reconstruction based on the transport of intensity equation and partial least-square regression
Author(s): Jiantai Dou; Zhishan Gao; Zhongming Yang; Qun Yuan; Jun Ma
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Paper Abstract

Multilayer defects which reside on the top or inside the multilayer are one of the most critical concerns in the extreme ultraviolet lithography (EUVL) manufacturing process. We proposed the transport of intensity equation and partial least-square regression (TIE & PLSR) method to inspect the defect and reconstruct its geometric parameters: height and full width at half maximum (FWHM). The transport of intensity equation (TIE) is employed to retrieve the phase of the multilayer defect from the two scattering images, which collected at two adjacent propagation distances. Comparing the simulated ideal phase, the phase deformations caused by different top heights and widths of the defects are analyzed. The optical properties maximum, minimum and fitting Zernike coefficients are used to parameterize the phase deformation. Partial least-squares regression (PLSR) is applied to associate the optical properties of the phase deformation with the geometric parameters of the defects, and reconstruct geometric parameters of the measured defect from the established data library. The reconstruction error is less than 0.2% in simulation experiment.

Paper Details

Date Published: 10 February 2017
PDF: 5 pages
Proc. SPIE 10250, International Conference on Optical and Photonics Engineering (icOPEN 2016), 1025004 (10 February 2017); doi: 10.1117/12.2266645
Show Author Affiliations
Jiantai Dou, Nanjing Univ. of Science and Technology (China)
Zhishan Gao, Nanjing Univ. of Science and Technology (China)
Zhongming Yang, Nanjing Univ. of Science and Technology (China)
Qun Yuan, Nanjing Univ. of Science and Technology (China)
Jun Ma, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10250:
International Conference on Optical and Photonics Engineering (icOPEN 2016)
Anand Krishna Asundi; Xiyan Huang; Yi Xie, Editor(s)

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