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Proceedings Paper

Cellular-automata model of oxygen plasma impact on porous low-K dielectric
Author(s): Askar Rezvanov; Igor V. Matyushkin; Oleg P. Gutshin; Evgeny S. Gornev
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Paper Abstract

Cellular-automata model of oxygen plasma influence on the integral properties of porous low-K dielectric is studied. The present work investigates the imitative simulation of this process. In our model we consider one isolated pore, which is simulated by cylinder with length L=200 nm and radius 1 nm ignoring the curvature factor. The simulation was performed for 2 million automata steps that correspond to 2 seconds in the real process time. Extrapolating the data to the longer time shows that more and more •CH3 groups will be replaced by the •OH groups, and over time almost all methyl groups will leave the pore surface (there is not more than 20% of the initial methyl groups amount on the first low-K dielectric 40nm after 2 seconds simulation).

Paper Details

Date Published: 30 December 2016
PDF: 10 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241X (30 December 2016); doi: 10.1117/12.2266626
Show Author Affiliations
Askar Rezvanov, Moscow Institute of Physics and Technology (Russian Federation)
Molecular Electronics Research Institute (Russian Federation)
Igor V. Matyushkin, Molecular Electronics Research Institute (Russian Federation)
Oleg P. Gutshin, Molecular Electronics Research Institute (Russian Federation)
Evgeny S. Gornev, Moscow Institute of Physics and Technology (Russian Federation)
Molecular Electronics Research Institute (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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