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Proceedings Paper

Doping transition metal ions into laser host crystals by hot isostatic pressing (HIP) (Conference Presentation)
Author(s): Jacob O. Barnes; Ronald W. Stites; Gary Cook; Sean McDaniel; Douglas M. Krein; Shekhar Guha; John Goldsmith
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Paper Abstract

This paper describes using a hot isostatic pressing (HIP) to improve II-VI crystal characteristics and diffuse metal ions into laser host crystals. Thin layers of metal are sputtered onto the surface of zinc selenide and zinc sulfide crystals prior to being HIP treated. The pre and post treatment optical properties for these materials are measured using various methods and at a variety of dopant concentrations.

Paper Details

Date Published: 7 June 2017
PDF: 1 pages
Proc. SPIE 10192, Laser Technology for Defense and Security XIII, 101920A (7 June 2017); doi: 10.1117/12.2266541
Show Author Affiliations
Jacob O. Barnes, UES, Inc. (United States)
Ronald W. Stites, AFRL/RYDH (United States)
Gary Cook, AFRL/RYDH (United States)
Sean McDaniel, AFRL/RYDH (United States)
Douglas M. Krein, General Dynamics Information Technology (United States)
Shekhar Guha, AFRL/RXAP (United States)
John Goldsmith, AFRL/RYDP (United States)


Published in SPIE Proceedings Vol. 10192:
Laser Technology for Defense and Security XIII
Mark Dubinskii; Stephen G. Post, Editor(s)

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