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Time-resolved temperature measurement and numerical simulation of superposed pulsed Nd:YAG laser irradiated silicon
Author(s): Xueming Lv; Yunxiang Pan; Zhichao Jia; Zhonghua Shen; Jian Lu; Xiaowu Ni
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Paper Abstract

Time-resolved surface temperature of single crystal silicon was measured by an infrared radiation pyrometer. The silicon sample was irradiated by two pulsed Nd:YAG lasers with pulse duration of 1ms superposed by 7ns pulses, referred to as combined pulse laser (CPL). The change of the damage radius with the millisecond (ms) laser energy density was studied, and then compared with that of single ms laser irradiation. An axisymmetric numerical model was established for calculation of the temperature field distribution while silicon was irradiated by single ms laser and CPL, respectively. Compared with experimental results, the CPL-silicon damage mechanism was discussed.

Paper Details

Date Published: 12 May 2017
PDF: 9 pages
Proc. SPIE 10173, Fourth International Symposium on Laser Interaction with Matter, 101730D (12 May 2017); doi: 10.1117/12.2266434
Show Author Affiliations
Xueming Lv, Nanjing Univ. of Science and Technology (China)
Yunxiang Pan, Nanjing Univ. of Science and Technology (China)
Zhichao Jia, Nanjing Univ. of Science and Technology (China)
Zhonghua Shen, Nanjing Univ. of Science and Technology (China)
Jian Lu, Nanjing Univ. of Science and Technology (China)
Xiaowu Ni, Nanjing Univ. of Science and Technology (China)


Published in SPIE Proceedings Vol. 10173:
Fourth International Symposium on Laser Interaction with Matter
Yongkun Ding; Guobin Feng; Dieter H. H. Hoffmann; Jianlin Cao; Yongfeng Lu, Editor(s)

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