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Proceedings Paper

Plasma parameters and active species kinetics in CF4/O2/Ar gas mixture: effects of CF4/O2 and O2/Ar mixing ratios
Author(s): Junmyung Lee; Kwang-Ho Kwon; A. Efremov
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Paper Abstract

The effects of both CF4/O2 and O2/Ar mixing ratios in three-component CF4/O2/Ar mixture on plasma parameters, densities and fluxes of active species determining the dry etching kinetics were analyzed. The investigation combined plasma diagnostics by Langmuir probes and zero-dimensional plasma modeling. It was found that the substitution of CF4 for O2 at constant fraction of Ar in a feed gas produces the non-monotonic change in F atom density, as it was repeatedly reported for the binary CF4/O2 gas mixtures. At the same time, the substitution of Ar for O2 at constant fraction of CF4 results in the monotonic increase in F atom density toward more oxygenated plasmas. The natures of these phenomena as well as theirs possible impacts on the etching/polymerization kinetics were discussed in details.

Paper Details

Date Published: 30 December 2016
PDF: 8 pages
Proc. SPIE 10224, International Conference on Micro- and Nano-Electronics 2016, 102241U (30 December 2016); doi: 10.1117/12.2266348
Show Author Affiliations
Junmyung Lee, Korea Univ. (Korea, Republic of)
Kwang-Ho Kwon, Korea Univ. (Korea, Republic of)
A. Efremov, Ivanovo State Univ. of Chemistry and Technology (Russian Federation)


Published in SPIE Proceedings Vol. 10224:
International Conference on Micro- and Nano-Electronics 2016
Vladimir F. Lukichev; Konstantin V. Rudenko, Editor(s)

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